> process technology migration to 3- and 2-nanometer (nm) based on the company’s Gate-All-Around (GAA) transistor structure<p>I believe GAA is the next gen tech for the node process. Samsung is the first foundry to do GAA w/3nm while TSMC is sticking w/FinFET for their 3nm. It'll be interesting to see how 3nm FinFET compare to 3nm GAA.<p><a href="https://www.anandtech.com/show/16041/where-are-my-gaafets-tsmc-to-stay-with-finfet-for-3nm" rel="nofollow">https://www.anandtech.com/show/16041/where-are-my-gaafets-ts...</a><p>edit:<p>>After that, transistor structures begin to change. Samsung and TSMC are manufacturing chips at 7nm and 5nm based on today’s finFETs. Samsung will move to nanosheet FETs at 3nm. Intel is also developing GAA technology. TSMC plans to extend finFETs to 3nm, and then will migrate to nanosheet FETs at 2nm around 2024.<p><a href="https://semiengineering.com/the-increasingly-uneven-race-to-3nm-2nm/" rel="nofollow">https://semiengineering.com/the-increasingly-uneven-race-to-...</a>