> In a frontside design, the silicon substrate can be as thick as 750 micrometers. Because silicon conducts heat well, this relatively bulky layer helps control hot spots by spreading heat from the transistors laterally. Adding backside technologies, however, requires thinning the substrate to about 1 mm to provide access to the transistors from the back.<p>This is a typo here, right? 1mm is thicker, not thinner, than 750 micrometers. I assume 1µm was meant?